Bonn 2025 – wissenschaftliches Programm
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Q: Fachverband Quantenoptik und Photonik
Q 70: Nanophotonics I
Q 70.3: Vortrag
Freitag, 14. März 2025, 11:30–11:45, HS I PI
A high-throughput characterisation setup for colour centres in SiC — •Jonah Heiler1,2, Flavie D. Marquis1,2, Leonard K.S. Zimmermann1,2, Sushree Swateeprajnya Behera1,2, Nien-Hsuan Lee1,2, Stephan Kucera1, Jonathan Körber3, Raphael Wörnle3, Jörg Wrachtrup3, and Florian Kaiser1,2 — 1Smart Materials Unit, Luxembourg Institute of Science and Technology, Belval, Luxembourg — 2Department of Physics and Materials Science, University of Luxembourg, Belvaux, Luxembourg — 33rd Institute of Physics, University of Stuttgart, Stuttgart, Germany
Optically active spins in solids, so-called colour centres, build a promising quantum technology platform, in parts due to their inherent spin-photon interface. Silicon carbide emerged as a popular host for colour centres due to its wafer-scale availability and its developed manufacturing processes. An ongoing challenge in the field, the low efficiency of the spin-photon interface, can be overcome using nanophotonic structuring. However, this process often leads to a degradation of the optical properties since it increases the susceptibility to surface charge noise. The conventional method to investigate these effects, confocal microscopy, by design, can only investigate a single emitter at a time. We report on the development of a widefield cryogenic microscope setup that allows for an investigation of 100–1000 colour centres in silicon carbide simultaneously. In our first investigation, we investigate divacancies in nanopillars, fabricated using a combination of e-beam lithography, ion implantation, and reactive ion etching.
Keywords: Colour Centres; Silicon Carbide; Nanofabrication; Widefield Microscopy