Bonn 2025 – scientific programme
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Q: Fachverband Quantenoptik und Photonik
Q 75: Quantum Technologies (Solid State Systems) (joint session Q/QI)
Q 75.8: Talk
Friday, March 14, 2025, 16:15–16:30, HS I
Purcell enhancement of single defects in silicon carbide coupled to a a fiber-based Fabry-Pérot microcavity — •Jannis Hessenauer1, Jonathan Körber2, Jawad Ul-Hassan3, Georgy Astakhov4, Wolfgang Knolle5, Jörg Wrachtrup2, and David Hunger1 — 1Physikalisches Institut, Karlsruhe Institute of Technology (KIT), Germany — 23rd Institute of Physics, University of Stuttgart, Germany. — 3Department of Physics, Chemistry and Biology, Linköping University, Sweden. — 4Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Germany. — 5Leibniz-Institute of Surface Engineering (IOM), Germany.
The negatively charged silicon vacancy center (V2) in silicon carbide (SiC) has recently emerged as a promising realization of a solid-state spin-photon interface. Remarkably, it exhibits narrow optical linewidths, even when integrated into nanostructures, and at temperatures up to 20 K. However, only a small fraction of the light is emitted into the coherent zero-phonon line. An optical microcavity can be used to enhance this fraction via the Purcell effect. In this work, we integrate a three micron thin membrane of SiC containing color centers into a cryogenic fiber-based Fabry-Pérot-resonator. We study the cavity-membrane system and find excellent agreement with our model and minimal losses introduced by the membrane. We observe Purcell enhancement of the zero-phonon line, manifesting itself in a lifetime shortening and a strong zero-phonon line emission. Utilizing the spectral selectively of the cavity allows us to address individual defects in a spatially dense sample, which results in a high single photon purity.
Keywords: Silicon Carbide; Solid state emitter; Microcavity; Fiber-Cavity; Purcelleffect