Bonn 2025 – wissenschaftliches Programm
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Q: Fachverband Quantenoptik und Photonik
Q 76: Nanophotonics II
Q 76.1: Vortrag
Freitag, 14. März 2025, 14:30–14:45, WP-HS
Towards a versatile Silicon-Carbide-on-Insulator Platform for Quantum Nanophotonics with Optically Active Spins — •Leonard K.S. Zimmermann1,2, Flavie Davidson-Marquis1,2, Jonah Heiler1,2, Samuel C. Eserin3, Stephen K. Clowes3, Benedict N. Murdin3, Stephan Kucera1, and Florian Kaiser1,2 — 1Luxembourg Institute of Science and Technology (LIST), Esch-sur-Alzette, Luxembourg — 2University of Luxembourg, Esch-sur-Alzette, Luxembourg — 3Advanced Technology Institute, University of Surrey, Guildford, United Kingdom
Colour centres offer promising properties for quantum technologies, including controllable generation, processing, and tuning. Silicon carbide (SiC) is a promising material for a scalable nanophotonics platform, given its mature device technology. Recent demonstrations show color centers in SiC with good preserved spin-optical coherence and effective spin-photon interaction in nanophotonic devices. This allows SiC to combine multiple functionalities on a single chip, such as small quantum processors with quantum memories. The next steps are further developing the Silicon-Carbide-on-Insulator (SiCOI) platform on multiple fronts. Different insulator materials are investigated to increase the spin-photon interface efficiency and the first results from an ongoing implantation-annealing study to generate divacancy colour centres in 4H-SiC using a Helium-Neon-Focussed-Ion-Beam are shown.
Keywords: Colour Centres; Silicon Carbide; Silicon-Carbide-On-Insulator; Ion Implantation