Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

QI: Fachverband Quanteninformation

QI 11: Semiconductor Spin Qubits II: Si, Ge, and Color Centers

QI 11.5: Vortrag

Dienstag, 11. März 2025, 12:15–12:30, HS II

Coupling Silicon-Vacancy Color Center Spin Qubits with Acoustic Modes in Diamond HBARs — •Stefan Pfleging1,2, Arianne Brooks1,2, Chris Adambukulam1,2, and Yiwen Chu1,21Department of Physics, ETH Zürich, Otto-Stern-Weg 1, CH-8093 Zurich, Switzerland — 2Quantum Center, ETH Zürich, Otto-Stern-Weg 1, CH-8093 Zurich, Switzerland

The silicon-vacancy (SiV) color center's electronic spin is a promising platform for realizing a quantum memory in hybrid quantum system devices. It is highly strain susceptible and exhibits coherence times in the order of 10 ms at milli-Kelvin temperatures. Incorporating it into diamond high-overtone bulk acoustic wave resonators (HBARs) exhibiting high quality factors would allow for acoustic coupling to the defect. We first characterize the strain response of the SiV by applying an acoustic drive to it and sweeping the laser frequency across one of the optical transitions of the SiV. The intensity of the sidebands that the transition is expected to exhibit in its optical emission signal allows for quantifying the coupling of the acoustic mode to the color center. We then present an approach to manipulate the spin qubit with modes of the HBAR and show suitable conditions for efficient spin driving and optical readout. The sample architecture we use consists of a diamond, HBARs that contain SiVs, bonded to a chip with antennas used for piezoelectric driving of the HBAR modes. By measuring our device at milli-Kelvin temperatures, we aim to demonstrate coherent coupling between the HBAR modes and the SiV spin qubit.

Keywords: Acoustic resonator; Color centers; Quantum memory

100% | Bildschirmansicht | English Version | Kontakt/Impressum/Datenschutz
DPG-Physik > DPG-Verhandlungen > 2025 > Bonn