Göttingen 2025 – wissenschaftliches Programm

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P: Fachverband Plasmaphysik

P 19: Low Pressure Plasmas and their Applications II

P 19.5: Vortrag

Donnerstag, 3. April 2025, 12:15–12:30, ZHG006

Plasma Sheath Tailoring for Advanced 3d Plasma Etching: Effects of Mask Geometry and Etching Materials — •Elia Jüngling, Gerardo Gutiérrez, Marc Böke, and Achim von Keudell — Ruhr University Bochum, Germany

Three-dimensional (3D) etching of materials by plasmas represents a significant challenge for microstructuring applications to produce advanced sensors, optics and microfluidics. Previously, we proposed the use of a local magnetic field in combination with a metallic mask to manipulate the plasma dynamics above the substrate and have achieved asymmetric etching profiles [1]. The experiments were explained regarding the E^→×B^→ drifts during the local sheath expansion in the RF plasmas. This controls the plasma density distribution above and the transport to the surface.
This concept is further investigated for the application of glass and Si 3d etching in an Ar/CF4 plasma. In the case of glass, the effect of spatially different etching rates is significantly more pronounced than that of silicon. This is presumed to be due to the differences in the etching chemistry of silicon vs. glass. Furthermore, the effect of different mask geometries has been explored. It has been demonstrated that the mask shape influences both the redeposition of sputtered CF-containing polymers from the mask surface onto the substrate and the etching profiles.
References: [1] Jüngling et al. Plasma sheath tailoring by a magnetic field for three-dimensional plasma etching. Appl. Phys. Lett. 12 February 2024; 124 (7): 074101.

Keywords: 3d etching; plasma etching; magnetic field; glass etching