Göttingen 2025 – scientific programme

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T: Fachverband Teilchenphysik

T 48: Silicon Detectors V (R&D, Simulation)

T 48.10: Talk

Wednesday, April 2, 2025, 18:30–18:45, VG 0.111

Test beam analysis of irradiated, passive CMOS strip sensors — •Fabian Lex for the CMOS Strips Collaboration collaboration — Albert-Ludwigs-Universität Freiburg, Freiburg, Germany

Nearly all envisioned future high-energy particle detectors will employ silicon sensors as their main tracking devices. Due to the increased demand in performance, large areas of the detectors will have to be covered with radiation hard silicon, facilitating the need for silicon sensors produced in large quantities, reliably and cost-efficiently. A possible solution to these challenges has been found in the utilization of the CMOS process, which is an industrial standard, offering the advantage of a large choice of vendors and reduced production costs. To create the larger sensor structures typical for silicon strip trackers, the stitching process has to be used. Three variations of passive CMOS strip sensors have been designed by the University of Bonn and produced by LFoundry in a 150 nm process. Sensor samples have been irradiated up to a fluence of 1 · 10¹⁶n_eq/cm² with reactor neutrons and up to 1 · 10¹⁵n_eq/cm² with 23 GeV protons. In order to investigate the general performance of the designs, they were simulated with Sentaurus TCAD software and investigated in several test beam campaigns at the DESY-II facility. This talk will summarise the most important results of the simulation as well as the measurements of the irradiated samples.

Keywords: CMOS; Silicon Strip Detectors; Test Beam; Irradiation Studies; TCAD Simulation