Göttingen 2025 – wissenschaftliches Programm

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T: Fachverband Teilchenphysik

T 48: Silicon Detectors V (R&D, Simulation)

T 48.4: Vortrag

Mittwoch, 2. April 2025, 17:00–17:15, VG 0.111

Resistive Silicon Detector R&D for Future Detectors — •Ling Leander Grimm, Alexander Dierlamm, Umut Elicabuk, Ulrich Husemann, Markus Klute, and Brendan Regnery — Institute of Experimental Particle Physics (ETP), Karlsruhe Institute of Technology (KIT)

The HL-LHC and future colliders present new challenges for the next generation of detectors, including improving pileup mitigation in high luminosity environments and particle identification. Resistive Silicon Detectors (RSDs/AC-LGADs) provide a promising solution by allowing ``4D'' tracking while minimizing power consumption, number of readout channels, and material budget.

RSDs combine Low Gain Avalanche Diode (LGAD) technology with a resistive cathode layer. Thanks to internal gain, the detector can be kept thin and therefore reduce material budget, while the resistive layer enables charge sharing among readout electrodes. As a result, the electrodes can be spaced further apart, which decreases the total number of required readout channels.

TCAD simulations aid in optimizing detector parameters and understanding internal functionality. Especially important is the determination of pad size and electrode shape.

This talk presents recent progress in Sentaurus TCAD simulations and experimental advances for RSD development at KIT and INFN/University of Torino.

Keywords: 4D tracking; Resistive Silicon Detectors; Low Gain Avalanche Diodes; TCAD simulations