Göttingen 2025 – wissenschaftliches Programm

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T: Fachverband Teilchenphysik

T 48: Silicon Detectors V (R&D, Simulation)

T 48.6: Vortrag

Mittwoch, 2. April 2025, 17:30–17:45, VG 0.111

Characterisation and Simulation of stitched CMOS Strip Sensors — •Naomi Davis for the CMOS Strips Collaboration collaboration — Deutsches Elektronen-Synchrotron (DESY), Hamburg, Germany

In high-energy physics, there is a need to investigate silicon sensor concepts that offer large- area coverage and cost-efficiency for particle tracking detectors. Sensors based on CMOS imaging technology present a promising alternative silicon sensor concept. As this technology follows a standardised industry process, it can provide lower sensor production costs and enable fast and large-scale production from various vendors.

The CMOS Strips project is investigating passive CMOS strip sensors fabricated by LFoundry in a 150 nm technology. The stitching technique was employed to develop two different strip sensor formats. The strip implant layout varies in doping concentration and width, allowing to study various depletion concepts and electric field configurations.

The performance of unirradiated samples is evaluated based on several test beam campaigns conducted at the DESY II test beam facility. Additionally, the detector response is simulated using Monte Carlo methods combined with TCAD Device simulations.

This contribution presents studies on the test beam performance of the sensors concerning their hit detection efficiency and resolution. In particular, the simulated detector response is presented and compared to test beam data.

Keywords: CMOS; Strip Sensor; Test Beam; Simulation; Allpix Squared