Göttingen 2025 – wissenschaftliches Programm
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T: Fachverband Teilchenphysik
T 48: Silicon Detectors V (R&D, Simulation)
T 48.7: Vortrag
Mittwoch, 2. April 2025, 17:45–18:00, VG 0.111
A novel Low Gain Avalanche Diode design: MARTHA — •Constanze Wais1, Alexander Bähr2, J. Damore2, Erika Garutti1, Christian Koffmane2, Jelena Ninkovic2, Rainer Richter2, Gerhard Schaller2, Florian Schopper2, Jörn Schwandt1, Johannes Treis2, and Annika Vauth1 — 1University of Hamburg — 2Semiconductor Laboratory of the Max Planck Society
The MARTHA - ’Monolithic Array of Reach THrough Avalanche photo diodes’ design aims to tackle the collapse of the electric field at the gaps of LGAD (low gain avalanche diode) pixel arrays while also preventing the pixel edges from becoming blind. By adding an additional n-doped field drop layer (FDL) between the multiplication layer and the n+-pixel contacts, the electric field at the n+-edges is reduced, thereby preventing them from breaking down. Since this FDL does not interrupt the multiplication layer, particle detection is also possible in the interpixel regions. A first prototype batch with test structures, such as diodes with and without a gain layer, and strip sensors based on the MARTHA principle has already been fabricated. The sensors are optimised for photon science and are expected to have a fill factor of 100%. In this talk the MARTHA concept as well as initial characterisation measurements, utilising I-V, C-V and TCT techniques, will be presented.
Keywords: LGAD