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T: Fachverband Teilchenphysik
T 48: Silicon Detectors V (R&D, Simulation)
T 48.8: Vortrag
Mittwoch, 2. April 2025, 18:00–18:15, VG 0.111
Exploring the potential of 4H-SiC diodes: Electrical properties and electron-hole pair creation energy — •Silas Müller1, Pascal Wolf1, Patrick Ahlburg1, Grégory Grosset2, Tomasz Hemperek1, and Jochen Dingfelder1 — 1University of Bonn, Physikalisches Institut, Nußallee 12, 53115 Bonn, Germany — 2Ion Beam Services IBS, Rue Gaston Imbert prolongée, ZI Peynier Rousset, 13790 Peynier, France
Silicon detectors are often used as tracking detectors in high-energy physics experiments as they can be designed for high radiation tolerance, high granularity and fast readout needed in such experiments. Furthermore, silicon is well understood and widely available. Silicon carbide (SiC) exhibits promising characteristics for the use in high-energy physics as well. Its wide band gap of 3.23 eV results in low leakage current, allowing for operation at high temperatures. The high displacement energy of 30-40 eV compared to 13-15 eV in silicon results in potentially better radiation hardness.
This talk presents an investigation of the properties of a p-in-n 4H-SiC diode. Details regarding the electrical characteristics of the diode as well as measurements determining the energy needed to create electron-hole pairs in 4H-SiC are discussed.
Keywords: SiC; silicon carbide; wide band gap; 4H-SiC; diode