Göttingen 2025 – wissenschaftliches Programm
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T: Fachverband Teilchenphysik
T 48: Silicon Detectors V (R&D, Simulation)
T 48.9: Vortrag
Mittwoch, 2. April 2025, 18:15–18:30, VG 0.111
Wafer-to-wafer bonded hybrid pixel detectors for high energy physics and medical applications — Fabian Hügging1, Kevin Kröninger2, Maximilian Mucha1, •Janna Vischer2, and Jens Weingarten2 — 1Universität Bonn, Bonn, Germany — 2Technische Universität Dortmund, Dortmund, Germany
Semiconductor pixel detectors allow for precisely tracking ionizing particles in high-energy physics experiments and medical applications. Previously, during the manufacturing of hybrid pixel detectors, a common practice to combine the separately manufactured sensor and its readout chip is to bump-bond two single dies together. Wafer-to-wafer bonding is a method in development for manufacturing hybrid pixel detectors, where whole detector wafers and chip wafers are bonded before being diced to their definite size. This promises detectors to have larger sensitive areas and a reduced thickness through thinning of the wafers after bonding. Currently, silicon sensor wafers have been developed for a combination with Timepix3 read-out chip wafers.
This talk will give an introduction to the first wafer-to-wafer semiconductor pixel detectors with a focus on the investigations of the still unbounded sensor wafer and a prospect of upcoming bonded wafer measurements.
Keywords: Silicon Detector; Timepix3; Wafer; Detector Development; Hybridization