Göttingen 2025 – wissenschaftliches Programm

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T: Fachverband Teilchenphysik

T 6: Silicon Detectors II (Belle II, Tristan)

T 6.3: Vortrag

Montag, 31. März 2025, 17:15–17:30, VG 1.101

Characterization of new BELLE-type DePFET pixel test-structures — •Erik Büchau, Florian Bernlochner, Jochen Dingfelder, Georgios Giakoustidis, and Jannes Schmitz — University of Bonn, Physikalisches Institut, Nußallee 12, 53115 Bonn, Germany

Silicon-based detectors are a fundamental component of particle tracking systems in modern High Energy Physics (HEP) experiments. The BELLE II experiment in Japan employs the Depleted P-channel Field Effect Transistor (DePFET) technology in its PiXel Detector (PXD), taking advantage of its low material budget while keeping low intrinsic noise at high signal-to-noise ratio. DePFET pixel technology is subject to extensive research and development, leading to the production of a new technology variation, PXD13. Due to its similarity to the existing PXD9 design, the PXD13 mini-matrices can be tested using the same infrastructure. Dedicated full system demonstrators (Hybrid5), containing the minimum amounts of all necessary components, are used for laboratory tests and characterization. First characterization results on transistor level, as well as signal response studies on Belle-type PXD13 mini matrices will be covered in this talk.

Keywords: BELLE2; silicon pixel detector; DePFET; detector characterization