Göttingen 2025 – wissenschaftliches Programm

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T: Fachverband Teilchenphysik

T 91: Silicon Detectors VIII (MAPS, misc.)

T 91.2: Vortrag

Freitag, 4. April 2025, 09:15–09:30, VG 1.101

Performance of irradiated TJ-Monopix2 depleted monolithic active pixel sensors — •Lars Schall, Christian Bespin, Ivan Caicedo, Jochen Dingfelder, Fabian Hügging, Hans Krüger, Rasmus Partzsch, Norbert Wermes, and Sinuo Zhang — Physikalisches Institut der Universität Bonn, Bonn, Germany

Monolithic active pixel sensors with depleted substrates present a promising option for pixel detectors in high-radiation environments. Leveraging high-resistivity silicon substrates and high bias voltages in commercial CMOS technologies facilitates full depletion of the charge sensitive volume and enhances the radiation tolerance and charge collection performance. TJ-Monopix2 is the most recent large-scale chip in its respective development line, originally designed for the outer layers of the ATLAS Inner Tracker. TJ-Monopix2 is designed in 180 nm TowerJazz CMOS technology and features a small charge collection electrode, which requires the separation of the in-pixel electronics into p-wells. Process modifications in form of an additional n-type implant minimize regions with low electric field and improve the charge collection efficiency impaired by the long drift distances. The small pixel size of 33 x 33 µm² reduces the detector capacitance to approximately 3 fF enhancing noise and power performance. This contribution focuses on the performance of TJ-Monopix2 chips after irradiation to 5e14 neq/cm² NIEL fluence and 100 Mrad in total ionizing dose. Latest laboratory and beam test measurements are presented.

Keywords: Monolithic; Pixel; CMOS