Köln 2025 – wissenschaftliches Programm

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HK: Fachverband Physik der Hadronen und Kerne

HK 43: Instrumentation IX

HK 43.5: Vortrag

Donnerstag, 13. März 2025, 15:15–15:30, SR Exp1A Chemie

Impact of gap size modifications on the performance of a 65 nm CMOS technology Monolithic Stitched Sensor towards the future ALICE ITS3 — •Anouk Kaiser for the ALICE Germany collaboration — Physikalisches Institut, Ruprecht-Karls-Universität Heidelberg, Heidelberg, Germany

The Monolithic Stitched Sensor (MOSS) is a wafer-scale, pixel sensor prototype designed to investigate stitching techniques, evaluate achievable yield, and serve as a proof of concept for the ALICE Inner Tracking System 3 (ITS3) upgrade. The 50  µ m thin sensor achieves full depletion at low reverse bias voltages through a deep n-type implant blanket extending beneath the collection diode. To improve charge collection efficiency at pixel boundaries, the design incorporates gaps of this implant between pixels in order to enhance lateral electric fields. The drift-based charge collection mechanism reduces the cluster size, making single-pixel hits the most common outcome.

This presentation will explain the analysis, using particles from a testbeam to determine performance parameters of the chip, namely the detection efficiency and the position resolution. It will examine the role of charge sharing at pixel boundaries, its effect on cluster size, and the resulting impact on position resolution. A key part of this study is comparing how two different gap sizes perform and understanding their role in shaping these results.

Keywords: MAPS, ALICE, ITS3, CMOS