Regensburg 2025 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 1: Thin Film Properties
DS 1.10: Vortrag
Montag, 17. März 2025, 12:15–12:30, H3
Optimizing erbium luminescence for integrated photonics via ytterbium co-doping and thermal annealing — •Sören Lerner1, Felix Mania1, Jiale Sun2, Zheru Qiu2, Xinru Ji2, Yang Liu2, Tobias Kippenberg2, and Carsten Ronning1 — 1Friedrich-Schiller Universität, Helmholtzweg 3, 07743 Jena, Germany — 2École Polytechnique Fédérale de Lausanne, Switzerland
Erbium ions are promising candidates for enabling efficient optical amplification of signals in photonic integrated circuits, but their practicality is hindered by insufficient output power. To address this, we utilize ion implantation into ultralow-loss silicon nitride (Si3N4) thin films and investigate co-doping with ytterbium ions to enhance absorption and emission through resonant energy transfer. We systematically investigate the effects of doping concentration and subsequent thermal annealing parameters using photoluminescence measurements. These findings provide insights into optimizing erbium-based light emitters for integrated photonics.
Keywords: Erbium; Ion Implantation; Thermal Annealing; Silicon Nitride; Photoluminescence