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DS: Fachverband Dünne Schichten
DS 1: Thin Film Properties
DS 1.3: Vortrag
Montag, 17. März 2025, 10:00–10:15, H3
RF sputtered growth of β-Ga2O3 on Ru(0001) films — •Aman Baunthiyal, Marco Schowalter, Martin Williams, Jon-Olaf Krisponeit, Thorsten Mehrtens, Alexander Karg, Andreas Rosenauer, Martin Eickhoff, and Jens Falta — Institute of Solid State Physics, University of Bremen, Germany
Gallium oxide (Ga2O3) is a leading candidate for high-power, high-frequency electronics due to its wide bandgap and high breakdown voltage. While its growth on insulating substrates like AlN and Al2O3 has been well-studied, research on metal substrates remains limited. This study investigates RF-sputtered growth of Ga2O3 thin films on Ru(0001) surfaces with varying roughness at temperatures from room temperature (RT) up to 600∘C [1].
AFM measurements showed that surface roughness peaks at intermediate growth temperatures, then decrease at 600∘C, suggesting a shift toward two-dimensional growth or increased surface diffusion. XRD revealed the amorphous nature of RT-grown Ga2O3 films but polycrystallinity in higher-temperature grown films. Films grown at 600∘C exhibited minimal change on annealing due to pre-existing polycrystallinity. TEM confirms polycrystalline β-Ga2O3, with crystallite sizes of ≈ 10 nm for RT samples and ≈ 80 nm for samples grown at 600∘C after annealing. These results highlight the impact of substrate morphology, growth temperature, and annealing on optimizing Ga2O3 films, supporting developments in Ga2O3-based vertical devices.
[1] Baunthiyal et al., Appl. Phys. Lett. 123, 213504 (2023).
Keywords: Gallium Oxide; Oxide sputtered growth; RF sputtering; Ru(0001)