Regensburg 2025 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
DS: Fachverband Dünne Schichten
DS 1: Thin Film Properties
DS 1.4: Vortrag
Montag, 17. März 2025, 10:15–10:30, H3
Molecule adsorption at Sc(x)Ga(1-x)N surfaces investigated by photo electron spectroscopy — •Fabian Ullmann1,2 and Stefan Krischok1,2 — 1TU Ilmenau, Ehrenbergstraße 29, 98693 Ilmenau — 2Zentrum für Mikro- und Nanotechnologien, Gustav-Kirchoff-Straße 7, 98693 Ilmenau
ScGaN can occur in various crystal orientations. The most important are wurtzite and rock salt formation. Depending on the scandium concentration, a phase transition between these orientations can be found. ScGaN surfaces with different scandium concentrations and orientations were grown by molecular beam epitaxy (MBE) to investigate the near-surface electronic structure. The interaction of gas molecules (oxygen and water) in vacuum were analyzed by X-ray (XPS) and ultraviolet photoelectron spectroscopy (UPS).
Keywords: ScGaN; UPS; Scandium; Gallium; MBE