Regensburg 2025 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 10: Transport Properties
DS 10.1: Vortrag
Donnerstag, 20. März 2025, 11:30–11:45, H14
A tunable room temperature nonlinear Hall effect in elemental bismuth thin films — •Pavlo Makushko1, Sergey Kovalev1, Yevhen Zabila1, Igor Ilyakov1, Alexey Ponomaryov1, Atiqa Arshad1, Gulloo Lal Prajapati1, Thales V. A. G. de Oliveira1, Jan-Christoph Deinert1, Paul Chekhonin1, Igor Veremchuk1, Tobias Kosub1, Yurii Skourski1, Fabian Ganss1, Denys Makarov1, and Carmine Ortix2 — 1Helmholtz-Zentrum Dresden-Rossendorf e.V. — 2Università di Salerno, Fisciano (SA), Italy
The nonlinear Hall effect with time-reversal symmetry is a second-order electronic transport phenomenon that induces frequency doubling and occurs in non-centrosymmetric crystals with Berry curvature dipole. This effect was typically reported in complex compounds characterized by Dirac or Weyl electrons at low temperatures. Here, we report a room temperature nonlinear Hall effect in polycrystalline thin films of the centrosymmetric elemental bismuth. The nonlinear transversal currents are induced by electrons at the (111) free surface, which possesses a Berry curvature triple. The nonlinear transverse voltage can be boosted by the geometric nonlinear Hall effect in arc-shaped bismuth stripes. The geometric curvature induced frequency doubling is extended to the second-harmonic generation in the terahertz spectral range. We also demonstrate efficient high-harmonic generation in polycrystalline bismuth films and bismuth-based heterostructures across a broad range of terahertz frequencies.
[1] P. Makushko et al., Nature Electronics 7, 207 (2024).
Keywords: Bismuth thin film; Nonlinear transport; THz harmonic generation