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DS: Fachverband Dünne Schichten
DS 10: Transport Properties
DS 10.4: Vortrag
Donnerstag, 20. März 2025, 12:15–12:30, H14
Electrical transport across thin catalyst/defect-engineered titania corrosion protection layer interfaces for photoelectrochemical applications — •Julius Kühne1,2, Tim Rieth1,2, and Ian D. Sharp1,2 — 1Walter Schottky Institute, Technichal University of Munich, Am Coulombwall 4, 85748 Garching, Germany — 2Physics Department, TUM School of Natural Sciences, Technical University of Munich, Am Coulombwall 4, 85748 Garching, Germany
Producing value-added products via light-driven photoreduction represents a promising approach to sustainably address increasing CO2 emissions and meet the growing global energy demand. However, such solar fuels systems require passivating layers to chemically protect semiconductor light absorbers from harsh reaction environments. Despite great progress in the development of atomic layer deposited (ALD) protection layers, the factors governing efficient charge injection into the catalytic component remain not well understood. The nanoscale thickness of these ultrathin layers presents unique challenges, particularly for in-plane electrical measurements, complicating the reliable characterization of their transport properties compared to bulk materials. Here, the charge transport characteristics between various defect-engineered TiO2 protection layers grown with ALD and metal catalyst layers are investigated. By analyzing contact resistivity, carrier transport, and interface kinetics, this work seeks to deepen understanding of the interface between catalyst and protection layer.
Keywords: ALD protection layer; ultrathin in-plane conductance; Titania