Regensburg 2025 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 11: Thermoelectric and Phase Change Materials
DS 11.3: Vortrag
Donnerstag, 20. März 2025, 15:30–15:45, H3
Atomic arrangement in MBE grown chalcogenide thin films: structural investigation based on LEED-IV — •Maximilian Buchta1, Christoph Ringkamp1, Lucas Bothe1, and Matthias Wuttig2 — 1Peter Grünberg Institute - JARA-Institute Energy Efficient Information Technology (PGI-10), Jülich, Germany — 2I. Institute of Physics (IA), RWTH Aachen University, Germany
If chalcogenides such as GeTe or Sb2Te3 are confined to reduced dimensions, for instance by reducing the film thickness, distortions in the atomic arrangement of the crystal emerge, which have been investigated by techniques such as X-ray diffraction (XRD). However, for the chalcogenides SnTe and SnSe, density functional theory (DFT) predicts pronounced distortions not only for thin films but also at the vicinity of the surface, which cannot be resolved by XRD. Further, as the distortions occur in both out-of-plane and in-plane directions, advanced structural characterization techniques are necessary to determine the atomic arrangement. In this work, Low Energy Electron Diffraction (LEED) Intensity vs. Electron Energy (LEED-IV) curves will be utilized to determine the surface atomic arrangement of tin-based chalcogenide thin films (SnTe and SnSe), grown by Molecular Beam Epitaxy (MBE), providing direct experimental evidence for structural predictions based on DFT.
Keywords: Phase Change Materials; Molecular Beam Epitaxy; Low Energy Electron Diffraction; Atomic Arrangement; Metavalent Bonding