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DS: Fachverband Dünne Schichten

DS 12: Gaede-Jubiläumssitzung

DS 12.3: Hauptvortrag

Donnerstag, 20. März 2025, 17:30–18:00, H3

Gallium Nitride Technology - the second pillar of microelectronics — •Andreas Waag — Nitride Technology Center NTC, TU Braunschweig

The highly efficient radiative recombination makes GaN ideally suited for microLEDs with dimensions as small as 1 μm and even below. Besides display applications, their capability to produce optical patterns with high resolution, which can be modulated at extremely high frequencies, makes them suitable for numerous other applications.

Besides chip-based microscopy and highly efficient sensing, we explore these exciting properties for a new highly significant application: utilizing microLEDs in optical processing units for artificial intelligence workloads.

The talk will focus on technological challenges of chip processing and hybrid integration with silicon CMOS microelectronics. For all these applications, nitride technology and the exciting properties of GaN semiconductor devices are a key.

Keywords: Gallium Nitride Technology; Optical neuromorphic computing; microLEDs; microelectronics; Semiconductor technology