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DS: Fachverband Dünne Schichten
DS 13: Poster
DS 13.10: Poster
Donnerstag, 20. März 2025, 18:00–20:00, P1
Wet-Chemical Transfer and Post Characterization of Hexagonal Boron Nitride Grown on Ge(001)/Si Substrates — •Monika Choudhary1, Max Franck1, Daniele Capista1, Rasuole Lukose1, Christian Wenger1,2, and Mindaugas Lukosius1 — 1IHP-Leibniz-Institut für Innovative Mikroelektronik, Frankfurt Oder, Germany — 2Semiconductor Materials, BTU Cottbus-Senftenberg, Cottbus, Germany
This study presents a poly (methyl methacrylate) (PMMA) assisted transfer process for hexagonal boron nitride (hBN) epitaxially grown on Ge(001)/Si substrates via chemical vapor deposition using borazine at 900-980∘C. The transfer involves sequential etching of Si at 95∘C in KOH solution [1] and of Ge in NH4OH, H2O2, and H2O solution (1/1/5) at 75∘C [2]. The PMMA/hBN is then transferred onto SiO2/Si and TiN/Si substrates, confirmed by optical microscopy, Raman and X-ray photoelectron spectroscopy analyses. Furthermore, metal-insulator-metal devices are fabricated by gold deposition on hBN/TiN, yielding a resistivity of 5.1e-10 ohm*cm and a dielectric constant of 2.4, as determined by current-voltage and capacitance-voltage measurements. Additionally, hBN/graphene/hBN heterostructures are fabricated and characterized using optical microscopy and Raman analyses. Hall bar devices are then created by defining structures on the hBN/graphene/hBN stack using photolithography and reactive ion etching.
[1] P. Pal, et al. Micro and Nano Systems Letters 9 (2021):4. [2] S. Sioncke, et al. Solid State Phenomena 145-146 (2009):203-206.
Keywords: hexagonal boron nitride; 2D materials; wet-chemical transfer; graphene; 2D heterostructures