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DS: Fachverband Dünne Schichten

DS 13: Poster

DS 13.11: Poster

Donnerstag, 20. März 2025, 18:00–20:00, P1

Tuning the electronic structure of MoSe2 through molecular adsorbates — •Carolin Sabrina Schüle, Joschua Büble, and Heiko Peisert — Institut für Physikalische und Theoretische Chemie Universität Tübingen, Deutschland

Layered transition metal dichalcogenides have emerged as a promising alternative to conventional semiconductor materials. The electronic properties of TMDCs can be tuned by the adsorption of molecules, including weakly interacting, physisorbed carbon molecules. As example, a quenching of the low-temperature defect photoluminescence of MoS2 was observed after adsorption of metal-phthalocyanines, depending strongly on the central metal atom of the phthalocyanine.1 We studied interface properties of phthalocyanines (CoPc and CoPcF16) on MoSe2 and p-doped MoSe2 as example for comparably weakly interacting molecules, and compare them to HATCN - a strong electron acceptor. For the cobalt phthalocyanines, the exchange of the metal centre has only a small effect on the position of the highest occupied molecular orbital (HOMO), whereas fluorination of the molecular backbone lowers the HOMO considerably. The formation of dipols, interface states, as well as a band bending in the MoSe2 bulk substrates was observed, depending on the molecule under consideration. (1) DOI: 10.1021/jacs.1c07795.

Keywords: Semiconductor; XPS; Transition metal dichalcogenide; Phthalocyanines; Interfaces