Regensburg 2025 – scientific programme

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DS: Fachverband Dünne Schichten

DS 13: Poster

DS 13.12: Poster

Thursday, March 20, 2025, 18:00–20:00, P1

Synthesis of MoS₂ films for electronic and optoelectronic device applications — •Axel Printschler, Md Tarik Hossain, Julian Picker, Christof Neumann, and Andrey Turchanin — Friedrich-Schiller-Universität Jena, Institute of Physical Chemistry, Jena, Deutschland

Transition metal dichalcogenides (TMDs) are a class of 2D materials that have exceptional promise for a wide range of electronic and optoelectronic applications. In particular, TMD-based field-effect transistors (FETs) are continually in the focus of research because of their potential to overcome the limitations of traditional silicon-based devices. To efficiently fabricate FETs based on TMD monolayers, it is crucial to synthesize continues mono- or few layers of these materials on wafer scale and/or enable their growth at a predefined position on the wafer. In this study, we compare different methods for bottom-up synthesis of MoS₂ monolayers and thin films and characterize their properties for device applications. To this end, we employ CVD growth from solid and liquid state precursors as well as MOCVD growth using gaseous precursors. The synthesized films are characterized using complementary spectroscopy and microscopy techniques including optical and atomic force microscopy (AFM), X-ray photoelectron, Raman and photoluminescence (PL) spectroscopy, which is further complemented by electrical and optoelectrical measurements of the microfabricated FET devices.

Keywords: TMD; CVD growth; MOCVD; MoS2; TMD FETs