Regensburg 2025 – scientific programme

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DS: Fachverband Dünne Schichten

DS 13: Poster

DS 13.26: Poster

Thursday, March 20, 2025, 18:00–20:00, P1

Thin Film Effects in Ultra-thin, MBE-grown In₂Te₃-Films — •Lucas Bothe¹, Maximilian Buchta¹, Felix Hoff², Timo Veslin², Christoph Ringkamp², Ka Lai Mak¹, and Matthias Wuttig^1,2 — ¹Peter Grünberg Institute - JARA-Institute Energy Efficient Information Technology (PGI-10), Jülich, Germany — ²I. Institute of Physics (IA), RWTH Aachen University, Germany

InSbTe (IST) as an unconventional Phase Change Material is of significant interest in recent years. However, the related binary compound In₂Te₃ is less studied. With its small direct band gap and high absorption coefficient, it is an interesting candidate for e.g. photodetectors.

Here, a thin film series of In₂Te₃ was fabricated employing Molecular Beam Epitaxy (MBE) to achieve highly textured thin films. These films are characterized via XRD, RHEED and Raman spectroscopy. Next to the structural bulk values measured for the thickest In₂Te₃ sample, a decrease in the out-of-plane lattice constant by up to 0.4 A with decreasing film thickness is reported. The in-plane lattice constants however increase for thinner films. This trend with reduced film thickness contrasts known thin-film effects in metavalently bonded materials like Sb₂Te₃ or Bi, as In₂Te₃ is not expected to exhibit metavalency. Furthermore, the structural changes in the thin films are unlikely to arise from strain, given the Te-terminated Si surface promotes van der Waals growth, preventing alignment of the Si and In₂Te₃ in-plane lattice constants.

In addition, thickness-dependent vibrational properties were determined by Raman spectroscopy.

Keywords: MBE; In2Te3; RHEED; XRD; Raman