Regensburg 2025 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 13: Poster

DS 13.27: Poster

Donnerstag, 20. März 2025, 18:00–20:00, P1

The interface wz-GaN/rs-ScN studied by depth profiling photoelectron spectroscopy — Fabian Ullmann^1,2 and •Stefan Krischok^1,2 — ¹TU Ilmenau, Ehrenbergstraße 29, 98693 Ilmenau — ²Zentrum für Mikro- und Nanotechnologien, Gustav-Kirchoff-Straße 7, 98693 Ilmenau

Theoretical predictions show extreme high polarization gradients and polarization-induced surface charge densities at interfaces of rock salt ScN and wurtzite GaN.

Experimental investigation were made by depth profiling X-ray photoelectron spectroscopy (XPS) along the interface of rs-ScN and wz-GaN grown by molecular beam epitaxy (MBE).

Keywords: GaN; ScN; XPS; MBE; Interface