Regensburg 2025 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 13: Poster
DS 13.30: Poster
Donnerstag, 20. März 2025, 18:00–20:00, P1
Structural and optical properties of β- Ga2O3 thin films obtained by spray pyrolysis — •Polina Shamrovska1, 2, Oleksandr Selyshchev1, Narmina Balayeva1, Volodymyr Kudin2, and Dietrich Zahn1 — 1Technische Universität Chemnitz, Chemnitz, Germany — 2Taras Shevchenko National University of Kyiv, Kyiv, Ukraine
β- Ga2O3 thin films have gained significant research interest due to their wide bandgap, high thermal stability and breakdown voltage, making them suitable e.g. for UV photodetectors. Here, β- Ga2O3 thin films were deposited on c-plane sapphire substrates via spray pyrolysis, a cost-effective technique suitable for large-scale production. For deposition, we used Ga(NO3)3 dissolved in a 1 : 1 water-ethanol mixture or water with 1% polyethyleneimine, followed by annealing at 800 ∘C or 1000 ∘C. The films were characterized by SEM, AFM, Raman, XRD, spectroscopic ellipsometry, UV-vis spectroscopy, and electrical resistance measurements by the four-point probe.
The stoichiometric β-phase Ga2O3 films revealed a preferred ( −201 ) orientation in agreement with previous results [1]. The samples showed transparency of up to 99% in the visible range and a sharp absorption edge in the UV range with bandgaps of 4.9 to 5.3 eV. The resistivity of the films was in the GΩ range. The results obtained reveal that spray pyrolysis allows the fabrication of highly crystalline, transparent, and high-resistive β- Ga2O3 films suitable for further studies as UV photodetectors.
[1] Akazawa, Housei, Vacuum, 2016, 123: 8-16.
Keywords: thin films; Ga2O3 on sapphire; spray coating; transmittance; preferred orientation