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DS: Fachverband Dünne Schichten

DS 13: Poster

DS 13.36: Poster

Donnerstag, 20. März 2025, 18:00–20:00, P1

Deterministic single ion-implantation of Er into thin film lithium niobate — •Maranatha Andalis, Reiner Schneider, and Klaus D. Jöns — Institute for Photonic Quantum Systems (PhoQS), Center for Optoelectronics and Photonics Paderborn (CeOPP) and Department of Physics, Paderborn University, 33098 Paderborn, Germany

Incorporating rare earth ions (REIs) into lithium niobate-on insulators (LNOI) is of great interest in scalable photonic integrated circuits (PIC), enhancing the potential of LNOI with added functionalities enabled by the REIs. Erbium ions can be incorporated into LNOI using ion implantation and implemented at telecom wavelengths. Together with Ionoptika Ltd., we have customized a single ion implantation system called Q-One with up to 40 kV acceleration voltage. For most quantum applications, the site-selective implantation of a single REI is required. Our results show single Er ion implantation into LNOI with 85% efficiency using secondary electron emission detection. The Q-One single ion implanter, with its high-resolution mass-filtered focused ion beam, nanometer-precision stage, and choice of ion source, holds significant potential in deterministic ion implantation, crucial for scalable quantum technologies with REIs.

Keywords: tfln; ion implantation; deterministic implantation