Regensburg 2025 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 13: Poster

DS 13.47: Poster

Donnerstag, 20. März 2025, 18:00–20:00, P1

The influence of stoichiometry on molybdenum oxide-based memristors — •Katerina Maskanaki¹, Gion Kalemai^2,3, Evangelos K. Evangelou¹, and Anastasia Soultati² — ¹Department of Physics, University of Ioannina, 45110 Ioannina, Greece — ²Institute of Nanoscience and Nanotechnology (INN), National Center for Scientific Research Demokritos, 15341 Agia Paraskevi, Athens, Greece — ³Department of Physics, University of Patras, 26504 Patra, Rio, Greece

Transition metal oxides (TMOs) are a promising class of materials for neuromorphic computing and processing systems demonstrating a variety of resistive switching (RS) mechanisms. However, little is known about the correlation between its stoichiometry and RS. This study is focused on the development and characterization of molybdenum oxide memristors with different stoichiometry. Both, fully-stoichiometric (MoO₃) and sub-stoichiometric (MoO_3−x) molybdenum oxide devices showed good resistive switching behavior. However, the stoichiometric memristor exhibited better RS properties with endurance of 250 cycles, ON/OFF ratio > 10² and high retention of 2×10⁴ s, compared to the poor RS behavior of the device based on the MoO_3−x film. This impressive memristive behavior could be attributed to the excess of oxygen vacancies in the case of fully-stoichiometric memristor in respect to the sub-stoichiometric MoO_3−x which play crucial role in the conductive behavior of the device. The high reproducibility observed in MoO₃-based memristor highlights their potential for practical applications and scalability.

Keywords: memristors; transition metal oxides; resistive switching; stoichiometry; memristive behavior