Regensburg 2025 – scientific programme
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DS: Fachverband Dünne Schichten
DS 13: Poster
DS 13.4: Poster
Thursday, March 20, 2025, 18:00–20:00, P1
local charge transport properties of n-type organic semiconductor films based on T2-(NDI-T2)2 — •Zihao Liu1, Hajar Komekoz1, Nisarg Trivedi2, Dietrich R. T. Zahn1, Michael Sommer1, Frank Ortmann2, and Georgeta Salvan1 — 1Fakultät für Naturwissenschaften, Semiconductor Physics group, Technische Universität Chemnitz — 2TUM School of Natural Sciences,Technische Universität München
Due to the advantages of organic semiconductor thin films, such as weak spin-orbit coupling and low spin scattering, organic materials have emerged as a strong alternative to traditional metallic spacer layers in the field of spin valve devices with vast potential for future spintronic applications. This study investigates conjugated organic semiconductor materials, specifically T2-(NDI-T2)2, and its related compounds with different side chain lengths focusing on their electrical properties on the micrometer and nanometer scales. High-quality organic semiconductor thin films were fabricated on gold substrates by spin coating. The dielectric function ε and the film thicknesses were determined by spectroscopic ellipsometry. Kelvin Probe Force Microscopy (KPFM) and conductive atomic force microscopy (c-AFM) were employed to analyze the local charge transport properties of the films systematically. The findings provide crucial insights into the influence of molecular orientation on conductivity and charge carrier mobility providing a solid foundation for further understanding and application of organic semiconductor materials
Keywords: SYMS; Organic semiconductor; Electrical properties