Regensburg 2025 – scientific programme
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DS: Fachverband Dünne Schichten
DS 13: Poster
DS 13.50: Poster
Thursday, March 20, 2025, 18:00–20:00, P1
Electronic structure of the TiO2/AlInP heterointerface studied by photoemission spectroscopy — •Mohammad Amin Zare Pour1,2, Sahar Shekarabi1, Jonathan Diederich3, Negin Mogharehabed2, Christian Höhn3, Wolfram Jaegermann4, Dennis Friedrich3, Roel van de Krol3, Agnieszka Paszuk2, and Thomas Hannappel1 — 1Grundlagen von Energiematerialien, Technische Universität Ilmenau — 2Paszuk group, Technische Universität Ilmenau — 3Institut für solare Brennstoffe, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH — 4Fachgebiet Oberflächenforschung, Technische Universität Darmstadt
Many world-record photoelectrochemical cells use AlInP as a window layer for selective electron transport passivated with TiO2, which is stable in electrolytes. The electronic and atomic properties of the TiO2/AlInP heterointerface in dependence to AlInP surface terminations to were examined. TiO2 was deposited by atomic layer deposition on various AlInP surface reconstructions and the TiO2/AlInP interface band diagram was experimentally examined. XPS/UPS studies reveal that TiO2 deposition reduces AlInP band bending, while remaining surface states pin the fermi level and still induce band bending towards the interface. Based on AlInP surface reconstruction, the valence band offset ranges from 1.7 to 1.9 eV. The presence of an oxide layer hinders the growth of TiO2 relative to clean surfaces. AlInP window layers are prevalent in III-V heterostructures, therefore mapping the TiO2/AlInP interface's electrical properties can optimize photoelectrochemical interfaces and more.
Keywords: III-V semiconductors; AlInP; TiO₂ passivation layer; photoemission spectroscopy