Regensburg 2025 – scientific programme
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DS: Fachverband Dünne Schichten
DS 13: Poster
DS 13.52: Poster
Thursday, March 20, 2025, 18:00–20:00, P1
Ion Beam Sputter Deposition of Aluminium oxide Thin Films for electronic applications — •Prakrthi Alankaru Narayana1,2, Aurelio García-Valenzuela1, Jens Zscharschuch1, Charlotte Kielar1, Holger Lange1, Claudia Neisser1, Thomas Seyller2, and Artur Erbe1 — 1Institute of Ion Beam Physics and Materials Research, HZDR, Dresden, Germany — 2Institute of Physics, Technische Universität Chemnitz, Germany
Aluminium oxide (Al2O3) has drawn considerable interest from the research community due to its versatility in microelectronics particularly as a high-k dielectric in Complementary Metal Oxide Semiconductor (CMOS) devices. Ion Beam Sputter Deposition (IBSD), a physical vapor deposition method, facilitates the formation of Al2O3 thin films with fewer defects, improved composition, and better adhesion than compared to other physical deposition methods.
This work focuses on optimizing ion beam parameters to improve film properties such as stoichiometry, surface roughness, crystallinity, optical transmittance, and dielectric constant. Furthermore, the influences of oxygen flux and annealing on film properties have been investigated. To demonstrate the applicability of the deposited Al2O3 films, they have been utilized as a high-k dielectric material in metal-insulator-metal capacitors.
References
[1] P. T. Ahmadi, et al. Journal of Vacuum Science & Technology A 42, 063402 (2024).
[2] D. Niu et al. Surface and Coatings Technology 291, 318 (2016).
Keywords: Aluminium Oxide (Al2O3); Ion Beam Sputter Deposition (IBSD); Thin Films; High-k Dielectric; Oxygen flux