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DS: Fachverband Dünne Schichten

DS 13: Poster

DS 13.53: Poster

Donnerstag, 20. März 2025, 18:00–20:00, P1

Band gap engineering of SrNbO₃ using anions — •Abhishek Sharma, Jasnamol Palakkal, and Christian Jooss — Institute of Materials Physics, Georg-August-University of Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany

Green energy is the demand of this generation for a better, eco-friendly future. Solar energy, being a renewable source can fulfill our demand through solar energy harvesting, which converts available sunlight to electrical energy. Transparent conducting oxide SrNbO₃ is a promising material for use in silicon tandem solar cells due to its wide bandgap (1.99 eV) and flexibility of the transparency window to be varied across different wavelengths using defects concentration [1]. Cationic and anionic defect engineering also varies this material’s electrical conductivity from a metallic conductor to a ferroelectric insulator [2]. Upon introducing Sr vacancies, we changed the plasma frequency of SrNbO₃ from the visible light region (1.99 eV) to the near-infrared region (1.37 eV) [1]. In our ongoing work, we further vary the electrical and optical properties using anion modification in the form of oxygen defects and nitrogen anion introduction. A hybrid pulsed laser deposition unit with plasma sources for gases is being used carefully to control the anions in this materials system.

1. *Palakkal et al., arXiv:2410.01253.

2.*Chen. et.al., ACS Nano, 2017, 11, 12519-12525.

Keywords: Oxide pervoskite; Hybrid Pulse laser deposition; Transparent conductive oxide; Ferroelectric Insulator; Tandem solar cell