Regensburg 2025 – scientific programme

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DS: Fachverband Dünne Schichten

DS 13: Poster

DS 13.57: Poster

Thursday, March 20, 2025, 18:00–20:00, P1

Single-Phase Crystallization and Optimization for Optical and Electrical Properties of Sputtered In₃SbTe₂-SnTe Thin Films — •Zhengchao Zhu, Thomas Schmidt, Christian Stenz, and Matthias Wuttig — I. Institute of Physics (IA), RWTH Aachen University, Germany

Chalcogenide phase-change materials (PCMs) are known for their distinct differences in dielectric property i.e. є(ω) and electrical conductivity between their amorphous and crystalline states. This ability to rapidly switch between phases under light or electrical pulses makes them promising for applications in data storage and solar energy systems. One of the next-generation PCMs, In₃SbTe₂ (IST), exhibits a transition from dielectric to metallic behaviour when crystallized, a characteristic that spans the entire infrared spectrum and offers gigantic potential for advancing nanophotonic technologies. However, IST faces a limitation at high temperatures, where it decomposes into InSb and InTe, leading to reduced phase contrast and diminished performance. SnTe, with its similar lattice structure to IST, shows excellent miscibility with IST and can prevent phase separation. Never the leer, mixtures containing 30%-60% IST still exhibit tendencies of phase separation. This study aims to synthesize single-phase alloys using magnetron sputtering, evaluating phase separation across different stoichiometries. Subsequent investigations will focus on determining crystallization temperatures, electrical conductivity, and optical constants of the samples.

Keywords: phase change material; Crystallisation; Electrical properties; Optical properties