Regensburg 2025 – scientific programme
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DS: Fachverband Dünne Schichten
DS 13: Poster
DS 13.61: Poster
Thursday, March 20, 2025, 18:00–20:00, P1
Anomalous Nernst effect in Fe-Ge-N thin films for power generation applications — •Robin Kidangan Paul1, Imants Dirba1, Oliver Gutfleisch1, Jakub Vít2, Petr Levinský2, Kyo-Hoon Ahn2, Karel Knížek2, Markéta Jarošová2, Jaroslav Kohout2, Stanislav Mráz3, Marcus Hans3, and Jochen Schneider43 — 1Functional Materials, Technical University of Darmstadt, Germany — 2Institute of Physics of the CAS, Praha, Czech Republic — 3Materials Chemistry, RWTH Aachen University, Aachen, Germany
With the growing demand for sustainable energy solutions, thermoelectric devices that convert heat directly into electricity have gained significant interest. While conventional thermoelectric devices based on the Seebeck effect are well-established, their complex designs and geometric limitations have hindered large-scale adoption. Anomalous Nernst Effect (ANE)-based devices have recently emerged as a promising alternative, offering simpler geometries and device flexibility. However, their adoption is constrained by lower efficiencies and output voltages compared to Seebeck-based counterparts. This study focuses on addressing these challenges by exploring materials with high ANE coefficients. Among the candidates, Fe4N has attracted attention due to its cost-effectiveness, nontoxicity, and tunability through elemental doping. DFT calculations of the Berry curvature indicate that doping Fe4N with Ge can enhance its ANE coefficient. In this work, thin films of doped Fe4-xGexN were fabricated onto MgO substrates using magnetron sputtering. Crystal structure, microstructure and transport properties are systematically characterized.
Keywords: Thermoelectric; Anomalous Nernst Effect; Iron nitrides; Fe4N; ANE