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DS: Fachverband Dünne Schichten

DS 13: Poster

DS 13.61: Poster

Donnerstag, 20. März 2025, 18:00–20:00, P1

Anomalous Nernst effect in Fe-Ge-N thin films for power generation applications — •Robin Kidangan Paul¹, Imants Dirba¹, Oliver Gutfleisch¹, Jakub Vít², Petr Levinský², Kyo-Hoon Ahn², Karel Knížek², Markéta Jarošová², Jaroslav Kohout², Stanislav Mráz³, Marcus Hans³, and Jochen Schneider4³ — ¹Functional Materials, Technical University of Darmstadt, Germany — ²Institute of Physics of the CAS, Praha, Czech Republic — ³Materials Chemistry, RWTH Aachen University, Aachen, Germany

With the growing demand for sustainable energy solutions, thermoelectric devices that convert heat directly into electricity have gained significant interest. While conventional thermoelectric devices based on the Seebeck effect are well-established, their complex designs and geometric limitations have hindered large-scale adoption. Anomalous Nernst Effect (ANE)-based devices have recently emerged as a promising alternative, offering simpler geometries and device flexibility. However, their adoption is constrained by lower efficiencies and output voltages compared to Seebeck-based counterparts. This study focuses on addressing these challenges by exploring materials with high ANE coefficients. Among the candidates, Fe4N has attracted attention due to its cost-effectiveness, nontoxicity, and tunability through elemental doping. DFT calculations of the Berry curvature indicate that doping Fe4N with Ge can enhance its ANE coefficient. In this work, thin films of doped Fe4-xGexN were fabricated onto MgO substrates using magnetron sputtering. Crystal structure, microstructure and transport properties are systematically characterized.

Keywords: Thermoelectric; Anomalous Nernst Effect; Iron nitrides; Fe4N; ANE