Regensburg 2025 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 13: Poster
DS 13.63: Poster
Donnerstag, 20. März 2025, 18:00–20:00, P1
Electrical switching dynamics of Ge-Sb-Te alloys for phase-change memories — •Alexander Kiehn1, Ramon Pfeiffer2, and Matthias Wuttig1,2 — 1Peter Grünberg Institute - JARA-Institute Energy Efficient Information Technology (PGI-10), Jülich, Germany — 2I. Institute of Physics (IA), RWTH Aachen University, Germany
Phase-change materials composed of Ge-rich Ge-Sb-Te alloys are promising candidates for next-generation phase-change memory (PCM) due to their nonvolatile nature, temperature stability, and fast switching speeds. These properties make them ideal for in-memory computing or applications in sensor systems, where fast, energy-efficient and reliable memory is crucial. However, in order to integrate PCMs into the usual semiconductor devices, it is necessary to reduce the switching voltage and current. This is influenced by the stoichiometry of the sputtered Ge-Sb-Te layer, which was varied in this study. Using industry-standard CMOS fabrication processes, chips were manufactured based on a confined cell PCM design. Based on the electrical switching results, trends in thermal stability and the resulting voltage requirements are clearly shown for increasing Ge content. These trends are supported by further investigating the crystallization behavior in optically-switched thin films.
Keywords: phase-change memory; crystallization kinetics; metavalent bonding; Ge-Sb-Te