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DS: Fachverband Dünne Schichten

DS 15: Organic Thin Films, Organic-Inorganic Interfaces

DS 15.6: Vortrag

Freitag, 21. März 2025, 11:15–11:30, H3

Highly-Robust Double Neuromorphic Device Based on Perovskite/Molybdenum Oxide-Sulfide Compound Heterojunction — •Gion Kalemai^1,2, Michael-Alexandros Kourtis³, Anastasia Soultati¹, Apostolos Verykios¹, Dimitris Davazoglou¹, and Maria Vasilopoulou¹ — ¹Institute of Nanoscience and Nanotechnology (INN) National Center for Scientific Research Demokritos, Agia Paraskevi, Athens, Greece — ²Department of Physics, University of Patras, Patra Rio, Greece — ³Institute of Informatics & Telecommunications, National Center for Scientific Research Demokritos, Agia Paraskevi, Athens, Greece

This study addresses the fundamental perovskite memristor limitations by integrating a robust molybdenum oxide-sulfide (MoO3-MoS2) mixed layer beneath a RbCsMAFA quadruple cation perovskite, precisely engineered through sulfurization of sub-stoichiometric MoO3-x. The resulting neuromorphic device exhibits impressive RS, with an ON-OFF ratio of 100, high retention & endurance, and a 0.5sec switching speed. Analysis confirm the successful control in the MoO3-MoS2 structure, which introduces trap states within the bandgap, facilitating SCLC and enabling robust memory function.

The composite, demonstrates enhanced synaptic emulation capabilities, such as PPF-PPD, and STP-LTP, replicating key synaptic functions for neuromorphic computing. Notably, this device offers excellent stability under 85°C, an enhanced ON-OFF ratio under illumination. Thus, the potential of sub-stoichiometrically engineered architectures is underlined.

Keywords: Neuromorphic Devices; Memristors; Halide Perovskites; Heterojunction; Oxides