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DS: Fachverband Dünne Schichten

DS 2: Layer Deposition

DS 2.3: Vortrag

Montag, 17. März 2025, 10:00–10:15, H14

Selective Area Atomic Layer Deposition via Photoexcitation — •Paul Butler^1,2, Stefan A. Maier³, and Ian D. Sharp^1,2 — ¹Walter Schottky Institut, Technische Universität München, 85748, Garching, Germany — ²Physics Department, TUM School of Natural Science, Technical Universität München, 85748, Garching, Germany — ³School of Physics and Astronomy, Monash University, 3800, Melbourne, Australia

While atomic layer deposition (ALD) is a powerful technique for uniformly coating complex surfaces with thin films, achieving lateral control of ALD layers remains a primary challenge. In this work, we examine a selective-area ALD (S-ALD) process via photoexcitation of the growth surface. We demonstrate that optical laser excitation enhances ALD-growth of TiO₂ films on gold surfaces deposited onto Si and SiO₂. These surfaces were exposed to titanium isopropoxide (TTIP) and ozone as reactants for the ALD process, during which some of the samples were exposed to laser illumination. In-situ ellipsometry was used to monitor the growth rate of the TiO₂ films during ALD, and ex-situ ellipsometry was used to map the height profile of the resulting TiO₂ films deposited. The results show intensity-dependent enhanced growth on surfaces that were excited with laser illumination. We also show that a shadow mask can be used to make patterned depositions.

Keywords: Atomic Layer Deposition; Selective Area Deposition; Photo-enhanced; Photothermal