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DS: Fachverband Dünne Schichten
DS 3: 2D Materials and their Heterostructures I (joint session DS/HL)
DS 3.5: Vortrag
Montag, 17. März 2025, 16:00–16:15, H3
Toward high-sensitivity and low-power consumption gas sensor devices based on 2D-transistors. — •Aurelio García Valenzuela1, Zahra Fekri1, Madhuri Chennur1, Nikol Lambeva1, Jens Zscharschuch1, Victoria Constance Köst2, Krysztof Nieweglowski2, and Artur Erbe1 — 1Institute of Ion Beam Physics and Materials Research, HZDR, Dresden, Germany — 2Institute of Electronic Packaging Technology, AVT, TU-Dresden, Germany
Two-dimensional (2D) materials exhibit excellent properties compared to their bulk counterparts and are promising for applications like gas sensors. Their high surface-to-volume ratio and surface-active sites enhance gas absorption and sensitivity, addressing challenges in detecting low concentrations and reducing power consumption.
This work presents the fabrication and testing of 2D materials-based field-effect transistor (FET) gas sensors. Mechanically exfoliated 2D materials are stacked into heterostructures to create back-gated FETs, with device patterning achieved via electron beam lithography.
The devices were exposed to NH3 and NO2 gases at various temperatures. Gas interactions caused systematic changes in p- and n-type currents and shifts in the transfer curve, depending on gas concentration and type (donor or acceptor). These results demonstrate the suitability of 2D materials-based FETs as efficient and sensitive gas sensors.
Keywords: Gas sensor; 2D materials; Field Effect Transistor; Selectivity; Sensitivity