Regensburg 2025 – scientific programme

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DS: Fachverband Dünne Schichten

DS 4: 2D Materials and their Heterostructures II (joint session DS/HL)

DS 4.3: Talk

Tuesday, March 18, 2025, 10:15–10:30, H3

Above room temperature ferromagnetism in large-area Fe₃GaTe₂/graphene van der Waals heterostructures — •Tauqir Shinwari¹, Kacho Imtiyaz Ali Khan¹, Hua Lv¹, Atekelta Abebe Kassa¹, Frans Munnik², Achim Trampert¹, Michael Hanke¹, Jens Herfort¹, and Joao Marcelo Jordao Lopes¹ — ¹Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany — ²Helmholtz-Zentrum Dresden-Rossendorf e.V. Dresden, Germany

Two-dimensional (2D) magnetic materials and van der Waals (vdW) heterostructures offer new possibilities for the realization of advanced spintronic devices. Fe₃GaTe₂, a 2D ferromagnetic metal with a high Curie temperature (∼ 360K) and strong perpendicular magnetic anisotropy, has emerged as a promising candidate for energy-efficient magnetic devices. However, all investigations conducted in Fe₃GaTe₂ so far have been performed using millimeter-sized bulk crystals and flakes exfoliated from them, both not suitable for integration in device processing. Hence, it is crucial to develop controlled large-scale growth of this material and investigate its properties. In this contribution, we present a breakthrough in the high-quality, large-area epitaxial growth of Fe₃GaTe₂ thin films on epitaxial graphene/SiC(0001) substrates using molecular beam epitaxy. These results are highly relevant for the future development of high-performance spintronic devices based on 2D heterostructures potentially revolutionizing data storage, processing, and quantum computing applications.

Keywords: MBE; Graphene; 2D materials; Spintronics; Magnetism