Regensburg 2025 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
DS: Fachverband Dünne Schichten
DS 5: Thin Oxides and Oxide Layers
DS 5.2: Vortrag
Dienstag, 18. März 2025, 14:15–14:30, H3
Adsorption-controlled growth of α-(Al,Ga)2O3 and β-(Al,Ga)2O3 on Al2O3 by suboxide molecular-beam epitaxy (S-MBE) — •Sushma Raghuvansy1, Marco Schowalter1, Alexander Karg1, Manuel Alonso-Orts1,2, Martin Williams1, Stephan Figge1, Andreas Rosenauer1,2, Martin Eickhoff1,2, and Patrick Vogt1,3 — 1Institute of Solid-State Physics, University of Bremen, Otto-Hahn-Allee 1, 28359, Bremen, Germany — 2MAPEX Center for Materials and Processes, University of Bremen, Bibliotheksstraße 1, 28359 Bremen, Germany — 3Max Planck Institute for solid state research, Heisenbergstraße 1, 70569 Stuttgart, Germany
Gallium oxide (Ga2O3) is a promising ultra-wide band gap semiconductor with extremely high (predicted) breakdown field for high performance power electronics.
α-Ga2O3 is isostructural to α-Al2O3, and allows alloying over the entire composition range from Ga2O3 (x=0) and Al2O3 (x=1) in α-(AlxGa1-x)2O3 [1]. For β-(AlxGa1-x)2O3, range with which Al can be alloyed is 0 <x < 0.61, which leads to a bandgap range of 4.6-5.9 eV [2].
In this contribution, we demonstrate the growth of high quality α-(Al,Ga)2O3 on Al2O3 (10-10) and Al2O3 (11-20) and β-(Al,Ga)2O3 on Al2O3 (0001) by suboxide molecular beam epitaxy (S-MBE). We investigated the influence of Al flux and growth parameter space of (Al,Ga)2O3 alloys on differently oriented Al2O3 substrates.
[1] R. Jinno et al., Science Advances 7 (2021) [2] T. Oshima et al., Jpn. J. Appl. Phys. 48, 070202 (2009)
Keywords: Gallium Oxide; Ultra wide band gap semiconductors; Molecular beam epitaxy; Thin films