Regensburg 2025 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 6: Thin Film Application
DS 6.5: Vortrag
Mittwoch, 19. März 2025, 10:45–11:00, H3
Achieving superconductivity in infinite-layer nickelate thin films by aluminum sputtering deposition — •dongxin zhang1, A. Raji2, L. M. Vicente-Arche1, A. Gloter2, M. Bibes1, and L. Iglesias1 — 1Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, 91405, France — 2Laboratoire de Physique des Solides, CNRS, Université Paris-Saclay, 91405, France
After decades of research, the recent discovery of superconductivity in hole doped infinite-layer nickelates (ABO2) has offered new perspectives to deepen the understanding of high-temperature superconductivity. infinite-layer (IL) nickelates are synthesized by topotactic reduction that selectively removes all apical oxygens of the precursor perovskite ABO3 phase. This is typically achieved by an ex-situ complex annealing using CaH2 as a reducing agent. However, the progress in this field is hampered by significant challenges in materials synthesis and the limited number of research groups capable of producing high-quality superconducting (SC) samples.Here, we present a new method to synthesize SC IL nickelates Pr0.8Sr0.2NiO2 thin films using an aluminum overlayer deposited by sputtering as a reducing agent. We optimized the aluminum deposition conditions and achieved SC samples reduced either in-situ or ex-situ. In-situ Al reduction enhances the quality of the SC Pr0.8Sr0.2NiO2 films, with a maximum transition temperature Tconset of 17 K. This simplified synthesis approach, more accessible than existing ones, enables more research groups to produce high-quality SC nickelate samples, Possibly advancing experimental understanding of superconductivity in IL nickelate.
Keywords: Nickelate; Superconductivity; Sputtering; in-situ reduction; Infinite-layer structure