Regensburg 2025 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 8: Optical Analysis of Thin Films I
DS 8.1: Vortrag
Mittwoch, 19. März 2025, 12:00–12:15, H3
Initial stages of Palladium growth on vicinal Si(001)-(2*1) surfaces — •Sandhya Chandola1, Norbert H. Nickel1, Julian Plaickner2, Jörg Rappich1, Karsten Hinrichs1, and Norbert Esser2 — 1Nanoscale Solid-Liquid Interfaces, Helmholtz-Zentrum Berlin für Materialien und Energie,Schwarzschildstr. 8, 12489 Berlin, Germany — 2Institut für Festkörperphysik, TU Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
Although palladium-based silicides are of great interest in many microelectronic applications, their formation mechanisms are still not fully understood, especially for thin films where the silicidation reaction may be controlled from the initial Pd-Si interactions at the interface.
The early stages of palladium silicide formation have been investigated in ultra-high vacuum (UHV), using Reflectance Anisotropy Spectroscopy (RAS) and Raman spectroscopy on vicinal Si(001) surfaces with different degrees of ordering. Raman spectroscopy has identified silicide-like reacted phases at the Si-Pd interface upon annealing, with the appearance of several phonon modes which are in very good agreement with vibrational modes obtained from ab initio calculations for Pd incorporation into Si surface layers.
The growth morphology of the Pd-Si structures was shown to be dependent on the initial surface reconstruction with in-situ RAS and ex-situ AFM (atomic force microscopy) clearly distinguishing between two types of structures depending on the substrate template.
Keywords: Palladium; Silicide; Optical; Morphology; Density Functional Theory