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DS: Fachverband Dünne Schichten
DS 9: Optical Analysis of Thin Films II
DS 9.4: Vortrag
Donnerstag, 20. März 2025, 11:00–11:15, H3
Synchrotron-based VUV ellipsometry on passivated Si samples for optical thin film metrology — •Julian Plaickner1, Alexander Gottwald2, Mattia Mulazzi2, Jörg Rappich3, Karsten Hinrichs3, Christoph Cobet4, Johanna Reck5, and Norbert Esser1 — 1Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin — 2Physikalisch-Technische Bundesanstalt, Abbestr. 2-12, 10587 Berlin — 3Nanoscale Solid-Liquid Interfaces, Helmholtz Zentrum Berlin für Materialien und Energie GmbH, Albert Einstein Str. 15, 12489 Berlin — 4Center for Surface and Nanoanalytics, Johannes Kepler Universität, Altenbergerstr. 69, 4040 Linz — 5SENTECH Instruments GmbH, Schwarzschildstr. 2, 12489 Berlin
The vacuum ultraviolet (VUV) spectral range spectral range is characterized by a lack of reliable data on optical properties due to the extreme surface sensitivity and the requirements of a high brightness light source. A method for determining traceble optical data with well-defined uncertainty budget is tested on novel reference materials. For this purpose, chemically passivated vicinal silicon surfaces were measured between 2 and 30 eV with the synchrotron-based VUV ellipsometer[1] at the Metrology Light Source (MLS) of the PTB. X-ray photoelectron spectroscopy (XPS) and IR ellipsometry measurements serve as quality cross checks for the prepared surfaces. In the spectral range between 2 and 6 eV, results are compared to reference measurements made with commercial SENTECH ellipsometers.
Keywords: ellipsometry; metrology; thin films; silicon