Regensburg 2025 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 9: Optical Analysis of Thin Films II
DS 9.8: Vortrag
Donnerstag, 20. März 2025, 12:15–12:30, H3
All-optical quality-control of indenene intercalation into graphene/SiC — •Cedric Schmitt1,2, Simone Sotgiu3, Stefan Enzner2,4, Jonas Erhardt1,2, Elena Stellino3, Domenico Di Sante5, Giorgio Sangiovanni2,3, Ralph Claessen1,2, Simon Moser1,2, and Leonetta Baldassarre3 — 1Physikalisches Institut, Universität Würzburg — 2Würzburg-Dresden Cluster of Excellence ct.qmat — 3Department of Physics, Sapienza University of Rome — 4Institut für Theoretische Physik und Astrophysik, Universität Würzburg — 5Department of Physics and Astronomy, University of Bologna
Intercalating two-dimensional quantum materials beneath a sheet of graphene provides effective environmental protection and facilitates ex situ device fabrication. However, developing a functional device requires rapid, large-scale screening methods to evaluate the quality of the intercalant, which to date can be monitored only by slow, UHV-based surface science techniques. In this study, we utilize ex situ Raman micro-spectroscopy to optically and non-destructively identify the quantum spin Hall insulator indenene, a monolayer of indium sandwiched between a SiC(0001) substrate and a single sheet of graphene. Color modulation combined with indenene's distinctive low-frequency Raman fingerprint enables rapid assessment of its homogeneity and crystalline quality. Density functional perturbation theory indicates that this Raman signature originates mainly from indenene's shear and breathing modes, while additional higher-order modes are tentatively attributed to defect-assisted and two-phonon Raman processes.
Keywords: Topological Insulator; Quantum spin Hall insulator; Raman spectroscopy; Graphene-intercalation