Regensburg 2025 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 10: Spin-Dependent Phenomena in 2D (joint session MA/HL)

HL 10.9: Talk

Monday, March 17, 2025, 17:00–17:15, H19

Identifying the Origin of Thermal Modulation of Exchange Bias in Fe3GeTe2/MnPS3 van der Waals Heterostructures — Aravind Puthirath Balan¹, •Aditya Kumar¹, Patrick Reiser², Joseph Vimal Vas³, Thibaud Denneulin³, Rafal E. Dunin-Borkowski³, Patrick Maletinsky², and Mathias Kläui¹ — ¹Institute of Physics, Johannes Gutenberg University Mainz, Staudinger Weg 7, 55128 Mainz, Germany — ²Department of Physics, University of Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland — ³Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons and Peter Grünberg Institute, Forschungszentrum Jülich, 52425 Jülich, Germany

This study investigates the origin of exchange bias in Fe3GeTe2/MnPS3 vdW heterostructures. A substantial 170 mT exchange bias is observed at 5 K, one of the largest values reported for vdW heterostructures, despite the compensated interfacial spin configuration of MnPS3. This exchange bias is linked to unexpected weak ferromagnetic ordering in MnPS3 below 40 K that we reveal by NV center imaging. A 1000% variation in the magnitude of exchange bias is obtained through thermal cycling linked to changes in the vdW gap during field cooling. Detailed interface analysis reveals atom migration between layers, forming amorphous regions on either side of the vdW gap. These findings underscore the robust and tunable nature of exchange bias in vdW heterostructures but also challenge the often assumed pristine nature of vdW interfaces calling for in-depth interface characterization.

^[1] A. P. Balan et al., Advanced Materials 36, 2403685 (2024).

Keywords: Exchange bias; Van der Waals; NV magnetometry; Interface