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HL: Fachverband Halbleiterphysik

HL 13: Heterostructures, Interfaces and Surfaces

HL 13.7: Vortrag

Montag, 17. März 2025, 18:15–18:30, H17

Electrostatic control of the band structure in HgTe heterostructures — •Moritz Siebert^1,2, Maximilian Hofer^1,2, Leonid Bovkun^1,2, Vladimir Marković^1,2, Christian Berger^1,2, Florian Bayer^1,2, Julian Kuther^1,2, Daniel Michel^1,2, Lena Fürst^1,2, Christopher Fuchs^1,2, Wouter Beugeling^1,2, Steffen Schreyeck^1,2, Hartmut Buhmann^1,2, Laurens W. Molenkamp^1,2, and Tobias Kießling^1,2 — ¹Physikalisches Institut (EP3), Universität Würzburg, Am Hubland, 97074 Würzburg, Germany — ²Institute for Topological Insulators, Am Hubland, 97074 Würzburg, Germany

We investigate the band structure of topologically inverted thick HgTe quantum wells employing magneto-optical THz- and IR-spectroscopy. The lithographic fabrication of a semi-transparent gate enables control of the charge carrier density in the quantum well. Our magnetic field dependent self-consistent k · p band structure calculations give insights into the physical origin of the observed spectral signatures. In this talk, I present how the electrostatic gating not only sets the number of free charge carriers in the HgTe quantum well - but also modifies the electronic dispersion - and explain the observed features.

Keywords: Topological insulators; Band structure theory; Terahertz spectroscopy; HgTe