Regensburg 2025 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 15: Quantum Dots and Wires: Growth and Properties
HL 15.3: Vortrag
Dienstag, 18. März 2025, 10:00–10:15, H13
Spatial Statistics of InAs Quantum Dots on GaAs(100) — •Normen Auler1, Viktoryia Zolatanosha2, and Dirk Reuter1,2,3 — 1Department Physik, Universität Paderborn, DE — 2Institute for Photonic Quantum Systems (PhoQS), Universität Paderborn, DE — 3Center for Optoelectronics and Photonics Paderborn (CeOPP), Universität Paderborn, DE
Self-assembled InAs quantum dots (QDs) on GaAs are potential building blocks for quantum technology applications. One interesting aspect is the spatial arrangement of the QDs.
In this contribution, we investigated the spatial distribution of QDs for samples with different QD densities by analyzing atomic force microscopy images. We evaluated Voronoi cell areas and nearest neighbor configurations. Contrary to the expected random distribution for Stranski-Krastanow-grown QDs, we observe deviations indicating an influence of strain fields and a corresponding effect on inter-island adatom diffusion on the final QD arrangement. We discuss the behavior for different densities in detail.
Keywords: InAs quantum dots; MBE; Spatial statistics; Ordering