Regensburg 2025 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 15: Quantum Dots and Wires: Growth and Properties
HL 15.4: Talk
Tuesday, March 18, 2025, 10:15–10:30, H13
Epitaxial growth and in-situ integration of high-quality single InGaAs quantum dots on a silicon substrate — •Imad Limame1, Peter Ludewig2, Aris Koulas-Simos1, Chirag C. Palekar1, Wolfgang Stolz2, and Stephan Reitzenstein1 — 1Technische Universität Berlin — 2NAsP III/V GmbH, Marburg, Deutschland
For over two decades, the integration of light sources onto the silicon (Si) platform has garnered significant interest in both scientific and industrial communities. Despite the cost-effectiveness of Si and its extensive use in semiconductor technology, its indirect bandgap limits its potential for optoelectronic applications. The direct growth of III-V materials, which offer excellent optical properties, on Si is appealing but challenging due to factors such as lattice mismatch, differences in thermal expansion coefficients, Si surface reactivity, and dislocation formation. We report on the direct epitaxial growth of InGaAs QDs in both the 940 and 1300 nm ranges with excellent quantum optical properties on a Si substrate. The heteroepitaxy of GaAs heterostructures on Si is achieved using a GaP buffer layer. The resulting QDs exhibit outstanding optical properties, showcasing the significant potential of this approach. Furthermore, using a strain-reducing layer (SRL), we grow single QDs in the telecom O-band, which are then integrated via in-situ electron beam lithography (EBL) into circular Bragg gratings (CBG) to enhance extraction efficiency for quantum communication applications.
Our results represent a significant step toward scalable, cost-effective, and Si-compatible quantum photonics devices.
Keywords: Quantum dots; Telecom O-band; CMOS-compatible; Silicon substrate; Silicon quantum photonics